NTMFS4836N
Power MOSFET
30 V, 90 A, Single N ? Channel, SO ? 8FL
Features
? Low R DS(on) to Minimize Conduction Losses
? Low Capacitance to Minimize Driver Losses
? Optimized Gate Charge to Minimize Switching Losses
? These are Pb ? Free Devices
Applications
? Refer to Application Note AND8195/D
? CPU Power Delivery
? DC ? DC Converters
? Low Side Switching
V (BR)DSS
30 V
http://onsemi.com
R DS(ON) MAX
4.0 m W @ 10 V
6.0 m W @ 4.5 V
D (5,6)
I D MAX
90 A
MAXIMUM RATINGS (T J = 25 ° C unless otherwise stated)
Parameter
Drain ? to ? Source Voltage
Gate ? to ? Source Voltage
Symbol
V DSS
V GS
Value
30
± 20
Unit
V
V
G (4)
S (1,2,3)
S
S
G
Continuous Drain
Current R q JA
(Note 1)
Power Dissipation
R q JA (Note 1)
Continuous Drain
Current R q JA
(Note 2)
Power Dissipation
R q JA (Note 2)
Continuous Drain
Current R q JC
(Note 1)
Power Dissipation
R q JC (Note 1)
Steady
State
T A = 25 ° C
T A = 85 ° C
T A = 25 ° C
T A = 25 ° C
T A = 85 ° C
T A = 25 ° C
T C = 25 ° C
T C = 85 ° C
T C = 25 ° C
I D
P D
ID
P D
I D
P D
18
13
2.25
11
8
0.89
90
65
55.6
A
W
A
W
A
W
N ? CHANNEL MOSFET
MARKING
DIAGRAM
D
1 S
4836N
SO ? 8 FLAT LEAD AYWZZ
CASE 488AA
STYLE 1
D
A
= Assembly Location
Y
= Year
W
= Work Week
ZZ
= Lot Traceability
D
D
Pulsed Drain
Current
T A = 25 ° C,
t p = 10 m s
I DM
180
A
Operating Junction and Storage
Temperature
Source Current (Body Diode)
Drain to Source DV/DT
Single Pulse Drain ? to ? Source Avalanche
Energy (T J = 25 ° C, V DD = 50 V, V GS = 10 V,
I L = 22 A pk , L = 1.0 mH, R G = 25 W)
T J ,
T STG
I S
dV/dt
EAS
? 55 to
+150
46
6
242
° C
A
V/ns
mJ
ORDERING INFORMATION
Device Package Shipping ?
NTMFS4836NT1G SO ? 8FL 1500 /
(Pb ? Free) Tape & Reel
NTMFS4836NT3G SO ? 8FL 5000 /
(Pb ? Free) Tape & Reel
Lead Temperature for Soldering Purposes T L 260 ° C
(1/8” from case for 10 s)
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface ? mounted on FR4 board using 1 sq ? in pad, 1 oz Cu.
2. Surface ? mounted on FR4 board using the minimum recommended pad size.
?For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
? Semiconductor Components Industries, LLC, 2012
May, 2012 ? Rev. 7
1
Publication Order Number:
NTMFS4836N/D
相关PDF资料
NTMFS4837NT1G MOSFET N-CH 30V 10A SO8 FL
NTMFS4839NT3G MOSFET N-CH 30V 9.5A SO-8FL
NTMFS4841NT3G MOSFET N-CH 30V 8.3A SO-8FL
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相关代理商/技术参数
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